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PS-R50L Datasheet

Part Number PS-R50L
Manufacturers KODENSHI KOREA CORP
Logo KODENSHI KOREA CORP
Description Paper sensors
Datasheet PS-R50L DatasheetPS-R50L Datasheet (PDF)

Paper sensors PS-R50L °§PS-R50D DIMENSIONS The PS-R50 photo switches are composed of a modulated infrared emitting diode at the light-emitting side and a modulated photo IC (in which a photodiode,signal processing circuit,constant voltage circuit and modulation circuit are integrated) at the light receiving side. PS-R50L : High level output at shielding PS-R50D : Low level output at shielding (Unit : mm) FEATURES ¶UHigh-speed response(0.5m sec.) ¶UAdjustable of detecting distance ¶UResistible .

  PS-R50L   PS-R50L






Part Number PS-R50D
Manufacturers KODENSHI KOREA CORP
Logo KODENSHI KOREA CORP
Description Paper sensors
Datasheet PS-R50L DatasheetPS-R50D Datasheet (PDF)

Paper sensors PS-R50L °§PS-R50D DIMENSIONS The PS-R50 photo switches are composed of a modulated infrared emitting diode at the light-emitting side and a modulated photo IC (in which a photodiode,signal processing circuit,constant voltage circuit and modulation circuit are integrated) at the light receiving side. PS-R50L : High level output at shielding PS-R50D : Low level output at shielding (Unit : mm) FEATURES ¶UHigh-speed response(0.5m sec.) ¶UAdjustable of detecting distance ¶UResistible .

  PS-R50L   PS-R50L







Paper sensors

Paper sensors PS-R50L °§PS-R50D DIMENSIONS The PS-R50 photo switches are composed of a modulated infrared emitting diode at the light-emitting side and a modulated photo IC (in which a photodiode,signal processing circuit,constant voltage circuit and modulation circuit are integrated) at the light receiving side. PS-R50L : High level output at shielding PS-R50D : Low level output at shielding (Unit : mm) FEATURES ¶UHigh-speed response(0.5m sec.) ¶UAdjustable of detecting distance ¶UResistible to exterior light because of composed of modulate APPLICATIONS ¶U Copiers ¶U Facsimiles MAXIMUM RATINGS Item Symbol Rating 8.0 12 30 30 £≠ 10 °≠£´ 60 £≠ 20 °≠£´ 70 Supply voltage VCC *1 Output voltage VO *2 OL Low level output current I Output transistor power dissipation PO *3*4 Operating temp. Topr. *3*4 Storage temp. Tstg. (Ta=2°…) 5 Unit V V mA mW °… °… C E : *2. C *3. *1. Output transistor V Output transistor : I No icebound or dew *4. The connector shall be inserted or pulled out at normal temperature. ELECTRO-OPTICAL CHARACTERISTICS Item Supply voltage Low level output voltage High level output voltage Supply current Minimum detecting distance Maximum detecting distance Non-detecting distance Response speed Exterior light endure Output state £® Ta=25 °…£© Symbol VCC VOL VOH CC I LDS LDL LNS tPLH/P tHL EV CC Conditions L=10mA VCC=5V,OI L=1k •ÿ VCC=5V,R VCC=5V Kodak 90% Min. Typ. 4.75 4.0 16 Max. 5.25 0.4 2 Unit. V V V mA mm mm =1k •ÿ V =5V,R L Kodak 90% 6 25 0.5 .


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