FEATURES ·High frequency operation ·Low forward voltage drop ·Planar passivated chips ·Minimum Lot-to-Lot variations for...
FEATURES ·High frequency operation ·Low forward
voltage drop ·Planar passivated chips ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
PSKT26/16
Thyristor Modules
APPLICATIONS ·induction heating ·Motor control
ABSOLUTE MAXIMUM RATINGS
SYMBOL
PARAMETER
CONDITIONS
VRRM VDRM
Repetitive Peak Reverse
Voltage Repetitive Peak Forward Blocking
Voltage
IT(AV) ITSM Viso TJ Tstg
Average Forward Current Peak, One-cycle, Non-repetitive Surge Current Isolated
Voltage
Junction Temperature
Storage Temperature Range
Sinewave,180°conduction,Tc=85℃ 8.3 msec (60Hz),sine
VALUE 1600 1600 25 700 2500
-40~125 -40~125
UNIT V V A A V ℃ ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case,Per Module
MAX 0.44
UNIT ℃/W
ELECTRICAL CHARACTERISTICS
SYMBOL
PARAMETER
VTM
Forward
Voltage Drop
IDRM
Peak Reverse and Off-state
IRRM
Leakage Current
IGT
DC gate current required to trigger
VGT
DC gate
voltage required to trigger
CONDITIONS ITM = 80 A,TJ = 25 ℃ VD= VDRM VR= VRRM,TJ = 125 ℃
VD= 6V,TJ = 25 ℃
MAX 2
5
UNIT V
mA
100
mA
1.6
V
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isc & iscsemi is registered trademark
PACKAGE OUTLINE Dimensions in mm (1mm = 0.0394“)
PSKT26/16
Thyristor Modules
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products ...
