LF PA K
PSMN011-30YLC
N-channel 30 V 11.6 mΩ logic level MOSFET in LFPAK using NextPower technology
Rev. 3 — 24 October...
LF PA K
PSMN011-30YLC
N-channel 30 V 11.6 mΩ logic level
MOSFET in LFPAK using NextPower technology
Rev. 3 — 24 October 2011 Product data sheet
1. Product profile
1.1 General description
Logic level enhancement mode N-channel
MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.
1.2 Features and benefits
High reliability Power SO8 package, qualified to 175°C Low parasitic inductance and resistance Optimised for 4.5V Gate drive utilising NextPower Superjunction technology Ultra low QG, QGD, & QOSS for high system efficiencies at low and high loads
1.3 Applications
DC-to-DC converters Load switching Synchronous buck regulator
1.4 Quick reference data
Table 1. Symbol VDS ID Ptot Tj RDSon Quick reference data Parameter drain-source
voltage drain current total power dissipation junction temperature drain-source on-state resistance VGS = 4.5 V; ID = 10 A; Tj = 25 °C; see Figure 12 VGS = 10 V; ID = 10 A; Tj = 25 °C; see Figure 12 Dynamic characteristics QGD QG(tot) gate-drain charge total gate charge VGS = 4.5 V; ID = 10 A; VDS = 15 V; see Figure 14; see Figure 15 VGS = 4.5 V; ID = 10 A; VDS = 15 V; see Figure 14; see Figure 15 1.4 4.9 nC nC Conditions 25 °C ≤ Tj ≤ 175 °C Tmb = 25 °C; VGS = 10 V; see Figure 1 Tmb = 25 °C; see Figure 2 Min -55 Typ 12.3 9.9 Max 30 37 29 175 14.5 11.6 Unit V A W °C mΩ mΩ
Static characteristics
NXP Semiconductors
PSMN011-30YLC
N-channel 30 V 11...