PSMN012-100YL
N-channel 100 V, 12 mΩ logic level MOSFET in LFPAK56
20 October 2016
Product data sheet
1. General des...
PSMN012-100YL
N-channel 100 V, 12 mΩ logic level
MOSFET in LFPAK56
20 October 2016
Product data sheet
1. General description
Logic level N-channel
MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product is designed and qualified for use in a wide range of power supply & motor control equipment.
2. Features and benefits
Advanced TrenchMOS provides low RDSon and low gate charge Logic level gate operation Avalanche rated, 100 % tested LFPAK provides maximum power density in a Power SO8 package
3. Applications
Synchronous rectification in power supply equipment Chargers & adaptors with Vout < 10 V Fast charge & USB-PD applications Battery powered motor control LED lighting & TV backlight
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDS drain-source
voltage 25 °C ≤ Tj ≤ 175 °C
ID
drain current
VGS = 5 V; Tmb = 25 °C; Fig. 2
Ptot total power dissipation Tmb = 25 °C; Fig...