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PSMN013-100BS Datasheet

Part Number PSMN013-100BS
Manufacturers NXP Semiconductors
Logo NXP Semiconductors
Description MOSFET
Datasheet PSMN013-100BS DatasheetPSMN013-100BS Datasheet (PDF)

PSMN013-100BS 21 February 2014 D2 PA K N-channel 100V 13.9mΩ standard level MOSFET in D2PAK Product data sheet 1. General description Standard level N-channel MOSFET in D2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 2. Features and benefits • • High efficiency due to low switching and conduction losses Suitable for standard level gate drive 3. Applications • • • • DC-to-DC converters Load.

  PSMN013-100BS   PSMN013-100BS






Part Number PSMN013-100BS
Manufacturers nexperia
Logo nexperia
Description N-channel MOSFET
Datasheet PSMN013-100BS DatasheetPSMN013-100BS Datasheet (PDF)

PSMN013-100BS N-channel 100V 13.9mΩ standard level MOSFET in D2PAK 21 February 2014 Product data sheet 1. General description Standard level N-channel MOSFET in D2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 2. Features and benefits • High efficiency due to low switching and conduction losses • Suitable for standard level gate drive 3. Applications • DC-to-DC converters • Load switching •.

  PSMN013-100BS   PSMN013-100BS







MOSFET

PSMN013-100BS 21 February 2014 D2 PA K N-channel 100V 13.9mΩ standard level MOSFET in D2PAK Product data sheet 1. General description Standard level N-channel MOSFET in D2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 2. Features and benefits • • High efficiency due to low switching and conduction losses Suitable for standard level gate drive 3. Applications • • • • DC-to-DC converters Load switching Motor control Server power supplies 4. Quick reference data Table 1. Symbol VDS ID Ptot Tj RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation junction temperature Conditions Tj ≥ 25 °C; Tj ≤ 175 °C Tmb = 25 °C; VGS = 10 V; Fig. 2 Tmb = 25 °C; Fig. 1 [1] Min -55 Typ - Max 100 68 170 175 Unit V A W °C Static characteristics drain-source on-state resistance VGS = 10 V; ID = 15 A; Tj = 100 °C; Fig. 12; Fig. 13 VGS = 10 V; ID = 15 A; Tj = 25 °C; Fig. 13 Dynamic characteristics QGD QG(tot) gate-drain charge total gate charge VGS = 10 V; ID = 25 A; VDS = 50 V; Fig. 15; Fig. 14 VGS = 10 V; ID = 25 A; VDS = 50 V; Fig. 14; Fig. 15 59 83 nC 17 23.8 nC 10.8 13.9 mΩ 19.4 25 mΩ Scan or click this QR code to view the latest information for this product NXP Semiconductors PSMN013-100BS N-channel 100V 13.9mΩ standard level MOSFET in D2PAK Symbol EDS(AL)S Parameter non-repetitive drainsource avalanche energy [1] Conditions VGS = 10 V; T.


2014-08-24 : BSH111    2N7002F    NXS7002AK    BSS138BKS    BSS138PS    NX7002AKS    PHB110NQ08T    PSMN4R4-80BS    PSMN5R0-80BS    PSMN8R7-80BS   


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