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PSMN013-60YL Datasheet

Part Number PSMN013-60YL
Manufacturers nexperia
Logo nexperia
Description N-channel MOSFET
Datasheet PSMN013-60YL DatasheetPSMN013-60YL Datasheet (PDF)

PSMN013-60YL N-channel 60 V, 13 mΩ logic level MOSFET in LFPAK56 3 June 2016 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product is designed and qualified for use in a wide range of power supply & motor control equipment. 2. Features and benefits • Advanced TrenchMOS provides low RDSon and low gate charge • Logic level gate operation • Avalanche rated, 100% tested • LFPAK provides maximum power den.

  PSMN013-60YL   PSMN013-60YL






N-channel MOSFET

PSMN013-60YL N-channel 60 V, 13 mΩ logic level MOSFET in LFPAK56 3 June 2016 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product is designed and qualified for use in a wide range of power supply & motor control equipment. 2. Features and benefits • Advanced TrenchMOS provides low RDSon and low gate charge • Logic level gate operation • Avalanche rated, 100% tested • LFPAK provides maximum power density in a Power SO8 package 3. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VDS drain-source voltage 25 °C ≤ Tj ≤ 175 °C ID drain current VGS = 5 V; Tmb = 25 °C; Fig. 2 Ptot total power dissipation Tmb = 25 °C; Fig. 1 Static characteristics RDSon drain-source on-state VGS = 5 V; ID = 15 A; Tj = 25 °C; Fig. 11 resistance Dynamic characteristics QGD gate-drain charge ID = 15 A; VDS = 48 V; VGS = 5 V; Tj = 25 °C; Fig. 13; Fig. 1.


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