PSMN013-60YL
N-channel 60 V, 13 mΩ logic level MOSFET in LFPAK56
3 June 2016
Product data sheet
1. General description
Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product is designed and qualified for use in a wide range of power supply & motor control equipment.
2. Features and benefits
• Advanced TrenchMOS provides low RDSon and low gate charge • Logic level gate operation • Avalanche rated, 100% tested • LFPAK provides maximum power den.
N-channel MOSFET
PSMN013-60YL
N-channel 60 V, 13 mΩ logic level MOSFET in LFPAK56
3 June 2016
Product data sheet
1. General description
Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product is designed and qualified for use in a wide range of power supply & motor control equipment.
2. Features and benefits
• Advanced TrenchMOS provides low RDSon and low gate charge • Logic level gate operation • Avalanche rated, 100% tested • LFPAK provides maximum power density in a Power SO8 package
3. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDS drain-source voltage 25 °C ≤ Tj ≤ 175 °C
ID
drain current
VGS = 5 V; Tmb = 25 °C; Fig. 2
Ptot total power dissipation Tmb = 25 °C; Fig. 1
Static characteristics
RDSon
drain-source on-state VGS = 5 V; ID = 15 A; Tj = 25 °C; Fig. 11 resistance
Dynamic characteristics
QGD
gate-drain charge
ID = 15 A; VDS = 48 V; VGS = 5 V;
Tj = 25 °C; Fig. 13; Fig. 1.