PSMN014-80YL
N-channel 80 V, 14 mΩ logic level MOSFET in LFPAK56
14 April 2016
Product data sheet
1. General descrip...
PSMN014-80YL
N-channel 80 V, 14 mΩ logic level
MOSFET in LFPAK56
14 April 2016
Product data sheet
1. General description
Logic level N-channel
MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product is designed and qualified for use in a wide range of power supply & motor control equipment.
2. Features and benefits
Advanced TrenchMOS provides low RDSon and low gate charge Logic level gate operation Avalanche rated, 100% tested LFPAK provides maximum power density in a Power SO8 package
3. Applications
Synchronous rectification in power supply equipment Chargers & adaptors with Vout < 10 V Fast charge & USB-PD applications Battery powered motor control LED lighting & TV backlight
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDS drain-source
voltage 25 °C ≤ Tj ≤ 175 °C
ID
drain current
VGS = 5 V; Tmb = 25 °C; Fig. 1
Ptot total power dissipation Tmb = 25 °C; Fig. 2
Static characteristics
RDSon
drain-source on-state VGS = 5 V; ID = 15 A; Tj = 25 °C; Fig. 11 resistance
Dynamic characteristics
QGD
gate-drain charge
ID = 15 A; VDS = 64 V; VGS = 5 V;
Tj = 25 °C; Fig. 13; Fig. 14
Min Typ Max Unit - - 80 V - - 62 A - - 147 W
-
12.2 15
mΩ
- 8.7 - nC
Nexperia
PSMN014-80YL
N-channel 80 V, 14 mΩ logic level
MOSFET in LFPAK56
5. Pinning information
Table 2. Pinning information Pin Symbol Description
Simplified outline
1 S source
mb
2 S source
3 S source
4G mb D
gate
mount...