PSMN015-110P

www.DataSheet4U.com PSMN015-110P TrenchMOS™ Standard level FET Rev. 01 — 08 January 2004 Product data 1. Product profile 1.1 Description SiliconMAX™ products use the latest Philips TrenchMOS™ technology to achieve the lowest possible on-state resistance in each package. 1.2 Features s Low on-state resistance s Low gate charge. 1.3 Applications s DC-to-DC converters s Switched-mode power supplies. 1.4 Quick reference data s VDS ≤ 110 V s Ptot ≤ 300 W s ID ≤ 75 A s RDSon ≤ 15 mΩ 2. Pinning information Table 1: 1 2 3 mb Pinning - SOT78, simplified outlines and symbol Simplified outline mb Pin Description gate (g) drain (d) source (s) mounting base; connected to drain (d) Symbol d g s MBB076 MBK106 1 2 3 SOT78 (TO-220AB) www.DataSheet4U.com Philips Semiconductors PSMN015-110P TrenchMOS™ Standard level FET 3. Ordering information Table 2: Ordering information Package Name PSMN015-110P TO-220AB Description Version Plastic single-ended package; heatsink mounted; 1 mounting hole; 3 leads SOT78 Type number 4. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VDGR VGS ID IDM Ptot Tstg Tj IS ISM drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) drain current (DC) peak drain current total power dissipation storage temperature junction temperature source (diode forward) current (DC) Tmb = 25 °C peak source (diode forward) current Tmb = 25 °C; pulsed; tp ≤ 10 µs unclamped ...