PSMN016-100PS
N-channel 100V 16 mΩ standard level MOSFET in TO-220
Rev. 3 — 27 September 2011
Product data sheet
1. ...
PSMN016-100PS
N-channel 100V 16 mΩ standard level
MOSFET in TO-220
Rev. 3 — 27 September 2011
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel
MOSFET in a TO220 packages qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.
1.2 Features and benefits
High efficiency due to low switching and conduction losses
Suitable for standard level gate drive
1.3 Applications
DC-to-DC converters Load switching
Motor control Server power supplies
1.4 Quick reference data
Table 1. Quick reference data
Symbol VDS ID
Parameter drain-source
voltage drain current
Conditions
Tj ≥ 25 °C; Tj ≤ 175 °C
Tj = 25 °C; VGS = 10 V; see Figure 1
Ptot total power dissipation
Tmb = 25 °C; see Figure 2
Tj junction temperature Static characteristics
RDSon
drain-source
VGS = 10 V; ID = 15 A; Tj = 100 °C;
on-state resistance see Figure 12
VGS = 10 V; ID = 15 A; Tj = 25 °C; see Figure 13
Dynamic characteristics
QGD gate-drain charge QG(tot) total gate charge Avalanche ruggedness
VGS = 10 V; ID = 30 A; VDS = 50 V; see Figure 14; see Figure 15
EDS(AL)S non-repetitive drain-source
avalanche energy
VGS = 10 V; Tj(init) = 25 °C; ID = 60 A; Vsup ≤ 100 V; unclamped; RGS = 50 Ω
Min Typ Max Unit - - 100 V - - 57 A
- - 148 W
-55 -
175 °C
- - 28.8 mΩ - 13 16 mΩ
- 15 - nC - 49 - nC
- - 101 mJ
Nexperia
PSMN016-100PS
N-channel 100V 16 mΩ standard level
MOSFET in T...
