PSMN018-80YS
N-channel LFPAK 80 V 18 mΩ standard level MOSFET
Rev. 02 — 28 October 2010 Product data sheet
1. Product p...
PSMN018-80YS
N-channel LFPAK 80 V 18 mΩ standard level
MOSFET
Rev. 02 — 28 October 2010 Product data sheet
1. Product profile
1.1 General description
Standard level N-channel
MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.
1.2 Features and benefits
Advanced TrenchMOS provides low RDSon and low gate charge High efficiency gains in switching power converters Improved mechanical and thermal characteristics LFPAK provides maximum power density in a Power SO8 package
1.3 Applications
DC-to-DC converters Lithium-ion battery protection Load switching Motor control Server power supplies
1.4 Quick reference data
Table 1. Symbol VDS ID Ptot Tj RDSon Quick reference data Parameter drain-source
voltage drain current total power dissipation junction temperature drain-source on-state resistance VGS = 10 V; ID = 5 A; Tj = 100 °C; see Figure 12 VGS = 10 V; ID = 5 A; Tj = 25 °C; see Figure 12; see Figure 13 Conditions Tj ≥ 25 °C; Tj ≤ 175 °C Tmb = 25 °C; VGS = 10 V; see Figure 1 Tmb = 25 °C; see Figure 2 Min -55 Typ 15 Max Unit 80 45 89 175 28 18 V A W °C mΩ mΩ
Static characteristics
NXP Semiconductors
PSMN018-80YS
N-channel LFPAK 80 V 18 mΩ standard level
MOSFET
Quick reference data …continued Parameter gate-drain charge total gate charge Conditions VGS = 10 V; ID = 25 A; VDS = 40 V; see Figure 14; see Figure 15 Min Typ 6 26 Max Unit nC nC
Table 1. Symbo...