Philips Semiconductors
Product specification
N-channel TrenchMOS transistor
FEATURES
• ’Trench’ technology • Very low...
Philips Semiconductors
Product specification
N-channel TrenchMOS transistor
FEATURES
’Trench’ technology Very low on-state resistance Fast switching Low thermal resistance
g
PSMN057-200B
QUICK REFERENCE DATA
d
SYMBOL
VDSS = 200 V ID = 39 A RDS(ON) ≤ 57 mΩ
s
GENERAL DESCRIPTION
SiliconMAX products use the latest Philips Trench technology to achieve the lowest possible on-state resistance in each package at each
voltage rating. Applications: d.c. to d.c. converters switched mode power supplies The PSMN057-200B is supplied in the SOT404 (D2PAK) surface mounted package.
PINNING - SOT404
PIN 1 2 3 mb gate drain (no connection possible) source drain DESCRIPTION
PIN CONFIGURATION
mb
SYMBOL
d
g
2 1 3
s
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER VDSS VDGR VGS ID IDM PD Tj, Tstg Drain-source
voltage Drain-gate
voltage Gate-source
voltage Continuous drain current Pulsed drain current Total power dissipation Operating junction and storage temperature CONDITIONS Tj = 25 ˚C to 175˚C Tj = 25 ˚C to 175˚C; RGS = 20 kΩ Tmb = 25 ˚C Tmb = 100 ˚C Tmb = 25 ˚C Tmb = 25 ˚C MIN. - 55 MAX. 200 200 ± 20 39 27.5 156 250 175 UNIT V V V A A A W ˚C
December 2000
1
Rev 1.000
Philips Semiconductors
Product specification
N-channel TrenchMOS transistor
AVALANCHE ENERGY LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER EAS IAS Non-repetitive avalanche energy Non-r...