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PSMN057-200P Datasheet

Part Number PSMN057-200P
Manufacturers Philips
Logo Philips
Description N-channel TrenchMOS transistor
Datasheet PSMN057-200P DatasheetPSMN057-200P Datasheet (PDF)

Philips Semiconductors Product specification N-channel TrenchMOS transistor FEATURES • ’Trench’ technology • Very low on-state resistance • Fast switching • Low thermal resistance g PSMN057-200P QUICK REFERENCE DATA d SYMBOL VDSS = 200 V ID = 39 A RDS(ON) ≤ 57 mΩ s GENERAL DESCRIPTION SiliconMAX products use the latest Philips Trench technology to achieve the lowest possible on-state resistance in each package at each voltage rating. Applications:• d.c. to d.c. converters • switched mode .

  PSMN057-200P   PSMN057-200P






Part Number PSMN057-200P
Manufacturers nexperia
Logo nexperia
Description N-channel MOSFET
Datasheet PSMN057-200P DatasheetPSMN057-200P Datasheet (PDF)

PSMN057-200P N-channel TrenchMOS SiliconMAX standard level FET Rev. 02 — 4 January 2011 Product data sheet 1. Product profile 1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits „ Higher operating power due to low thermal resistance „ Low condu.

  PSMN057-200P   PSMN057-200P







N-channel TrenchMOS transistor

Philips Semiconductors Product specification N-channel TrenchMOS transistor FEATURES • ’Trench’ technology • Very low on-state resistance • Fast switching • Low thermal resistance g PSMN057-200P QUICK REFERENCE DATA d SYMBOL VDSS = 200 V ID = 39 A RDS(ON) ≤ 57 mΩ s GENERAL DESCRIPTION SiliconMAX products use the latest Philips Trench technology to achieve the lowest possible on-state resistance in each package at each voltage rating. Applications:• d.c. to d.c. converters • switched mode power supplies The PSMN060-200P is supplied in the SOT78 (TO220AB) conventional leaded package. PINNING PIN 1 2 3 tab gate drain source drain DESCRIPTION SOT78 (TO220AB) tab 1 23 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER VDSS VDGR VGS ID IDM PD Tj, Tstg Drain-source voltage Drain-gate voltage Gate-source voltage Continuous drain current Pulsed drain current Total power dissipation Operating junction and storage temperature CONDITIONS Tj = 25 ˚C to 175˚C Tj = 25 ˚C to 175˚C; RGS = 20 kΩ Tmb = 25 ˚C Tmb = 100 ˚C Tmb = 25 ˚C Tmb = 25 ˚C MIN. - 55 MAX. 200 200 ± 20 39 27.5 156 250 175 UNIT V V V A A A W ˚C June 2000 1 Rev 1.000 Philips Semiconductors Product specification N-channel TrenchMOS transistor AVALANCHE ENERGY LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER EAS IAS Non-repetitive avalanche energy Non-repetitive avalanche current CONDITIONS Unclamped .


2005-05-17 : MC145151    HRS2H-S    STV5111    STPR1010CT    STPR1020CT    TBA810P    TBA810S    STK4191    STK4191V    PSF21911   


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