PSMN0R9-30ULD
N-channel 30 V, 0.87 mΩ, 300 A logic level MOSFET
in SOT1023A enhanced package for UL2595, using
NextPo...
PSMN0R9-30ULD
N-channel 30 V, 0.87 mΩ, 300 A logic level
MOSFET
in SOT1023A enhanced package for UL2595, using
NextPowerS3 Schottky-Plus Technology
23 May 2018
Product data sheet
1. General description
SOT1023A with improved creepage and clearance to meet UL2595 requirements. 300 Amp logic level gate drive N-channel enhancement mode
MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising Nexperia’s unique “SchottkyPlus” technology delivers high efficiency, low spiking performance usually associated with
MOSFETs with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies.
2. Features and benefits
Improved creepage and clearance – meets the requirements of UL2595 300 A capability Avalanche rated, 100% tested at IAS = 190 A Ultra low QG, QGD and QOSS for high system efficiency, especially at higher switching
frequencies Superfast switching with soft-recovery; s-factor > 1 Low spiking and ringing for low EMI designs Unique “SchottkyPlus” technology; Schottky-like performance with < 1 μA leakage at 25 °C Optimised for 4.5 V gate drive Low parasitic inductance and resistance High reliability clip bonded and solder die attach Power SO8 package; no glue, no wire bonds,
qualified to 150 °C Wave solderable; exposed leads for optimal visual solder inspection
3. Applications
Brushed and brushless motor control Battery p...