PSMN102-200Y

LF PA K PSMN102-200Y N-channel TrenchMOS SiliconMAX standard level FET Rev. 03 — 16 March 2011 Product data sheet 1. Product profile 1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits  Higher operating power due to low thermal resistance  Suitable for high frequency applications due to fast switching characteristics 1.3 Applications  Class D amplifier  DC-to-DC converters  Motion control  Switched-mode power supplies 1.4 Quick reference data Table 1. Symbol VDS ID Ptot Quick reference data Parameter drain-source voltage drain current total power dissipation drain-source on-state resistance Conditions Tj ≥ 25 °C; Tj ≤ 150 °C Tmb = 25 °C; VGS = 10 V; see Figure 1; see Figure 3 Tmb = 25 °C; see Figure 2 Min Typ Max Unit 200 V 21.5 A 113 W Static characteristics RDSon VGS = 10 V; ID = 12 A; Tj = 25 °C; see Figure 9; see Figure 10 86 102 mΩ Dynamic characteristics QGD gate-drain charge VGS = 10 V; ID = 12 A; VDS = 100 V; see Figure 11; see Figure 12 10.1 nC NXP Semiconductors PSMN102-200Y N-channel TrenchMOS SiliconMAX standard level FET 2. Pinning information Table 2. Pin 1 2 3 4 mb Pinning information Symbol Description S S S G D source source source gate mounting base; connected to drain mbb076 Simplified outline ...