PSMN1R0-40ULD

PSMN1R0-40ULD N-channel 40 V, 1.1 mΩ, 280 A logic level MOSFET in SOT1023A enhanced package for UL2595, using NextPower- S3 Schottky-Plus technology 23 May 2018 Product data sheet 1. General description SOT1023A with improved creepage and clearance to meet UL2595 requirements 280 Amp, logic level gate drive N-channel enhancement mode MOSFET in 150 °C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance power switching applications. 2. Features and benefits Improved creepage and clearance – meets the requirements of UL2595 280 A capability Avalanche rated, 100% tested at IAS = 190 A NextPower-S3 technology delivers 'superfast switching with soft recovery' Low QRR, QG and QGD for high system efficiency and low EMI designs Schottky-Plus body-diode, gives soft switching without the associated high IDSS leakage Optimised for 4.5 V gate drive utilising NextPower-S3 Superjunction technology High reliability LFPAK (Power SO8) package, copper-clip, solder die attach and qualified to 150 °C Exposed leads can be wave soldered, visual solder joint inspection and high quality solder joints Low parasitic inductance and resistance 3. Applications Brushed and brushless motor control Battery powered appliances where enhanced creepage and clearance is required to meet UL2595 For non-UL2595 applications please use PSMN1R0-40YLD 4. Quick reference data Table 1. Quick reference data...