PSMN1R0-40YSH

PSMN1R0-40YSH N-channel 40 V, 1 mΩ, 290 A standard level MOSFET in LFPAK56E using NextPower-S3 Schottky-Plus technology 25 April 2019 Product data sheet 1. General description 290 Amp, standard level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56E package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance power switching applications. 2. Features and benefits 290 A continuous ID(max) Avalanche rated, 100% tested NextPower-S3 technology delivers 'superfast switching with soft body-diode recovery' Low QRR, QG and QGD for high system efficiency and low EMI designs Schottky-Plus body-diode, gives soft switching without the associated high IDSS leakage Strong linear-mode / SOA rating High reliability LFPAK (Power SO8) package, with copper-clip and solder die attach, qualified to 175 °C Exposed leads can be wave soldered, visual solder joint inspection and high quality solder joints for ultimate reliability Low parasitic inductance and resistance 3. Applications High-performance synchronous rectification DC-to-DC converters High performance and high efficiency server power supply Brushless DC motor control Battery protection Load-switch and eFuse 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage ID drain current Ptot total power dissipation Tj junction temperature Static characteristics RDSon drain-source on-stat...