PSMN1R1-30PL

PSMN1R1-30PL 2 April 2014 TO -2 20A B N-channel 30 V 1.3 mΩ logic level MOSFET in TO-220 Product data sheet 1. General description Logic level N-channel MOSFET in TO-220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 2. Features and benefits High efficiency due to low switching and conduction losses Suitable for logic level gate drive sources 3. Applications DC-to-DC converters Load switiching Motor control Server power supplies 4. Quick reference data Table 1. Symbol VDS ID Ptot Tj RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation junction temperature Conditions Tj ≥ 25 °C; Tj ≤ 175 °C Tmb = 25 °C; VGS = 10 V; Fig. 2 Tmb = 25 °C; Fig. 1 [1] Min -55 Typ - Max 30 120 338 175 Unit V A W °C Static characteristics drain-source on-state resistance VGS = 10 V; ID = 25 A; Tj = 25 °C; Fig. 12 VGS = 10 V; ID = 25 A; Tj = 100 °C; Fig. 13 Dynamic characteristics QGD QG(tot) gate-drain charge total gate charge VGS = 4.5 V; ID = 75 A; VDS = 15 V; Fig. 14; Fig. 15 37 118 nC nC 1.5 1.8 mΩ [2] - 1.1 1.3 mΩ Scan or click this QR code to view the latest information for this product NXP Semiconductors PSMN1R1-30PL N-channel 30 V 1.3 mΩ logic level MOSFET in TO-220 Symbol EDS(AL)S Parameter non-repetitive drainsource avalanche energy [1] [2] Conditions VGS = 10 V; Tj(init) = 25 °C; ID = 120 A; Vsup ≤ 30 V; RGS = 50 Ω;...