PSMN1R2-25YL

PSMN1R2-25YL N-channel 25 V 1.2 mΩ logic level MOSFET in LFPAK Rev. 01 — 25 June 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in LFPAK package qualified to 150 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits „ Advanced TrenchMOS provides low RDSon and low gate charge „ High efficiency gains in switching power converters „ Improved mechanical and thermal characteristics „ LFPAK provides maximum power density in a Power SO8 package 1.3 Applications „ DC-to-DC converters „ Lithium-ion battery protection „ Load switching „ Motor control „ Server power supplies 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 150 °C - - 25 V ID drain current Tmb = 25 °C; VGS = 10 V; [1] - - 100 A see Figure 1 Ptot total power dissipation Tmb = 25 °C; see Figure 2 - - 121 W Tj junction temperature Avalanche ruggedness -55 - 150 °C EDS(AL)S non-repetitive drain-source avalanche energy Dynamic characteristics VGS = 10 V; Tj(init) = 25 °C; ID = 100 A; Vsup ≤ 25 V; RGS = 50 Ω; unclamped - - 677 mJ QGD QG(tot) gate-drain charge total gate charge VGS = 4.5 V; ID = 25 A; VDS = 12 V; see Figure 12; see Figure 13 - 11.9 - nC - 50.6 - nC Nexperia PSMN1R2-25YL N-channel 25 V 1.2 mΩ logic level MOSFET in LFPAK Table 1. Quick reference …continu...