LF PA K
PSMN1R2-30YLC
N-channel 30 V 1.25mΩ logic level MOSFET in LFPAK using NextPower technology
Rev. 1 — 3 May 2011 ...
LF PA K
PSMN1R2-30YLC
N-channel 30 V 1.25mΩ logic level
MOSFET in LFPAK using NextPower technology
Rev. 1 — 3 May 2011 Product data sheet
1. Product profile
1.1 General description
Logic level enhancement mode N-channel
MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.
1.2 Features and benefits
High reliability Power SO8 package, qualified to 175°C Optimised for 4.5V Gate drive utilising NextPower Superjunction technology Ultra low QG, QGD, and QOSS for high system efficiencies at low and high loads Ultra low Rdson and low parasitic inductance
1.3 Applications
DC-to-DC converters Lithium-ion battery protection Load switching Power OR-ing Server power supplies Sync rectifier
1.4 Quick reference data
Table 1. Symbol VDS ID
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Quick reference data Parameter drain-source
voltage drain current Conditions 25 °C ≤ Tj ≤ 175 °C Tmb = 25 °C; VGS = 10 V; see Figure 1
[1]
Min -55
Typ 1.35
Max 30 100 215 175 1.65
Unit V A W °C mΩ
Ptot Tj RDSon
total power dissipation Tmb = 25 °C; see Figure 2 junction temperature drain-source on-state resistance VGS = 4.5 V; ID = 25 A; Tj = 25 °C; see Figure 12 VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 12
Static characteristics -
-
1.05
1.25
mΩ
NXP Semiconductors
PSMN1R2-30YLC
N-channel 30 V 1.25mΩ logic level
MOSFET in LFPAK using NextPower
Quick reference data …continued Parameter gate-drain charge Condi...