PSMN1R5-30YLC

PSMN1R5-30YLC N-channel 30 V 1.55mΩ logic level MOSFET in LFPAK using NextPower technology 3 June 2021 Product data sheet 1. General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 2. Features and benefits High reliability Power SO8 package, qualified to 175°C Optimised for 4.5V Gate drive utilising NextPower Superjunction technology Ultra low QG, QGD, & QOSS for high system efficiencies at low and high loads Ultra low Rdson and low parasitic inductance 3. Applications DC-to-DC converters Lithium-ion battery protection Load switching Power OR-ing Server power supplies Sync rectifier 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage ID drain current Ptot total power dissipation Tj junction temperature Static characteristics RDSon drain-source on-state resistance Dynamic characteristics QGD gate-drain charge QG(tot) total gate charge Conditions 25 °C ≤ Tj ≤ 175 °C VGS = 10 V; Tmb = 25 °C; Fig. 2 Tmb = 25 °C; Fig. 1 VGS = 4.5 V; ID = 25 A; Tj = 25 °C; Fig. 12 VGS = 10 V; ID = 25 A; Tj = 25 °C; Fig. 12 ID = 25 A; VDS = 15 V; VGS = 4.5 V; Fig. 14; Fig. 15 ID = 25 A; VDS = 15 V; VGS = 10 V; Fig. 14; Fig. 15 Min Typ Max Unit - - 30 V [1] - - 200 A - - 179 W -55 - 175 °C - 1.65 2.05 mΩ - 1.3 1.55 mΩ - 8.6 - nC - 65 - nC [1]...