PSMN1R6-30MLH
N-channel 30 V, 1.9 mΩ, 160 A logic level MOSFET in
LFPAK33 using NextPowerS3 technology
29 November 20...
PSMN1R6-30MLH
N-channel 30 V, 1.9 mΩ, 160 A logic level
MOSFET in
LFPAK33 using NextPowerS3 technology
29 November 2018
Product data sheet
1. General description
Logic level gate drive N-channel enhancement mode
MOSFET in LFPAK33 package. NextPowerS3 technology delivers low RDSon, low IDSS leakage and high efficiency. Rated to 160 A and optimized for DC load switch and hot-swap applications.
2. Features and benefits
Optimized for low RDSon Low leakage < 1 µA at 25 °C Low spiking and ringing for low EMI designs Optimized for 4.5 V gate drive 160 A rated High reliability copper-clip bonded and solder die attach LFPAK33 package Qualified to 175 °C Exposed leads for optimal visual solder inspection
3. Applications
DC switch / load switch USB-PD and fast-charge Battery protection OR-ing and hot-swap Synchronous rectifier in AC-DC and DC-DC applications Brushed and BLDC (brushless) motor control
4. Quick reference data
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