PSMN1R6-30PL

PSMN1R6-30PL N-channel 30 V 1.7 mΩ logic level MOSFET Rev. 02 — 25 June 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in TO220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits „ High efficiency due to low switching and conduction losses „ Suitable for logic level gate drive sources 1.3 Applications „ DC-to-DC converters „ Load switiching „ Motor control „ Server power supplies 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - - 30 V ID drain current Tmb = 25 °C; VGS = 10 V; [1] - - 100 A see Figure 1; Ptot total power dissipation Tmb = 25 °C; see Figure 2 - - 306 W Dynamic characteristics QGD gate-drain charge VGS = 4.5 V; ID = 25 A; VDS = 15 V; see Figure 14; see Figure 15 - ...