PSMN1R9-40PL
N-channel 40 V, 1.7 mΩ logic level MOSFET in SOT78
1 February 2013
Product data sheet
1. General descri...
PSMN1R9-40PL
N-channel 40 V, 1.7 mΩ logic level
MOSFET in SOT78
1 February 2013
Product data sheet
1. General description
Logic level N-channel
MOSFET in SOT78 using TrenchMOS technology. Product design and manufacture has been optimized for use in battery operated power tools.
2. Features and benefits
High efficiency due to low switching & conduction losses Robust construction for demanding applications Logic level gate
3. Applications
Battery-powered tools Load switching Motor control Uninterruptible power supplies
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDS drain-source
voltage Tj ≥ 25 °C; Tj ≤ 175 °C
ID
drain current
VGS = 10 V; Tmb = 25 °C; Fig. 1
Ptot total power dissipation Tmb = 25 °C; Fig. 2
Static characteristics
RDSon
drain-source on-state VGS = 10 V; ID = 25 A; Tj = 25 °C;
resistance
Fig. 11
Dynamic characteristics
QG(tot) QGD
total gate charge gate-drain charge
VGS = 10 V; ID = 25 A; VDS = 32 V; Fig. 13; Fig. 14
Avalanche ruggedness
EDS(AL)S
non-repetitive drainsource avalanche energy
ID = 150 A; Vsup ≤ 40 V; RGS = 50 Ω; VGS = 10 V; Tj(init) = 25 °C; unclamped; Fig. 3
[1]
[1] Continuous current is limited by package.
Min Typ Max Unit - - 40 V - - 150 A - - 349 W
- 1.4 1.7 mΩ
- 230 - nC - 40.9 - nC
- - 801.1 mJ
Nexperia
5. Pinning information
Table 2. Pinning information Pin Symbol Description 1 G gate 2 D drain 3 S source
PSMN1R9-40PL
N-channel 40 V, 1.7 mΩ logic level MOSFE...
