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PSMN2R0-25MLD Datasheet

Part Number PSMN2R0-25MLD
Manufacturers nexperia
Logo nexperia
Description N-channel MOSFET
Datasheet PSMN2R0-25MLD DatasheetPSMN2R0-25MLD Datasheet (PDF)

PSMN2R0-25MLD N-channel 25 V, 2.1 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology 8 April 2016 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK33 package. NextPowerS3 portfolio utilising Nexperia’s unique “SchottkyPlus” technology delivers high efficiency, low spiking performance usually associated with MOSFETS with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPowerS3 .

  PSMN2R0-25MLD   PSMN2R0-25MLD






N-channel MOSFET

PSMN2R0-25MLD N-channel 25 V, 2.1 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology 8 April 2016 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK33 package. NextPowerS3 portfolio utilising Nexperia’s unique “SchottkyPlus” technology delivers high efficiency, low spiking performance usually associated with MOSFETS with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies. 2. Features and benefits • Ultra low QG, QGD and QOSS for high system efficiency, especially at higher switching frequencies • Superfast switching with soft-recovery; s-factor > 1 • Low spiking and ringing for low EMI designs • Unique “SchottkyPlus” technology; Schottky-like performance with < 1 µA leakage at 25 °C • Optimised for 4.5 V gate drive • Low parasitic inductance and resista.


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