PSMN2R0-25MLD
N-channel 25 V, 2.1 mΩ logic level MOSFET in LFPAK33
using NextPowerS3 Technology
8 April 2016
Product data sheet
1. General description
Logic level gate drive N-channel enhancement mode MOSFET in LFPAK33 package. NextPowerS3 portfolio utilising Nexperia’s unique “SchottkyPlus” technology delivers high efficiency, low spiking performance usually associated with MOSFETS with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPowerS3 .
N-channel MOSFET
PSMN2R0-25MLD
N-channel 25 V, 2.1 mΩ logic level MOSFET in LFPAK33
using NextPowerS3 Technology
8 April 2016
Product data sheet
1. General description
Logic level gate drive N-channel enhancement mode MOSFET in LFPAK33 package. NextPowerS3 portfolio utilising Nexperia’s unique “SchottkyPlus” technology delivers high efficiency, low spiking performance usually associated with MOSFETS with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies.
2. Features and benefits
• Ultra low QG, QGD and QOSS for high system efficiency, especially at higher switching
frequencies
• Superfast switching with soft-recovery; s-factor > 1 • Low spiking and ringing for low EMI designs • Unique “SchottkyPlus” technology; Schottky-like performance with < 1 µA leakage at
25 °C
• Optimised for 4.5 V gate drive • Low parasitic inductance and resista.