www.DataSheet4U.com
PSMN2R0-30YL
N-channel TrenchMOS logic level FET
Rev. 01 — 10 September 2008 Preliminary data sheet...
www.DataSheet4U.com
PSMN2R0-30YL
N-channel TrenchMOS logic level FET
Rev. 01 — 10 September 2008 Preliminary data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications.
1.2 Features and benefits
High efficiency due to low switching and conduction losses Suitable for logic level gate drive sources
1.3 Applications
Class-D
amplifiers DC-to-DC converters Motor control Server power supplies
1.4 Quick reference data
Table 1. VDS ID Ptot Quick reference Conditions Tmb = 25 °C; VGS = 10 V; see Figure 1; see Figure 3; Tmb = 25 °C; see Figure 2 [1] Min Typ Max 30 100 97 Unit V A W drain-source
voltage Tj ≥ 25 °C; Tj ≤ 150 °C drain current total power dissipation gate-drain charge Symbol Parameter
Dynamic characteristics QGD VGS = 4.5 V; ID = 10 A; VDS = 12 V; see Figure 14; see Figure 15 VGS = 10 V; ID = 15 A; Tj = 25 °C; see Figure 12 7.5 nC
Static characteristics RDSon drain-source on-state resistance 1.56 2 mΩ
[1]
Continuous current is limited by package.
www.DataSheet4U.com
NXP Semiconductors
PSMN2R0-30YL
N-channel TrenchMOS logic level FET
2. Pinning information
Table 2. Pin 1 2 3 4 mb S S S G D Pinning information Symbol Description source source source gate mounting base; connected to drain
mbb076
Simplified outline
mb
Graphic symbol
D
G S
1 2 3 4...