PSMN2R0-60PS

PSMN2R0-60PS 4 October 2012 N-channel 60 V 2.2 mΩ standard level MOSFET in TO-220 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a TO-220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to low switching and conduction losses Suitable for standard level gate drive sources 1.3 Applications DC-to-DC converters Load switching Motor control Server power supplies 1.4 Quick reference data Table 1. Symbol VDS ID Ptot Tj RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation junction temperature Conditions Tj ≥ 25 °C; Tj ≤ 175 °C Tmb = 25 °C; VGS = 10 V; Fig. 1 Tmb = 25 °C; Fig. 2 [1] Min -55 Typ - Max 60 120 338 175 Unit V A W °C Static characteristics drain-source on-state resistance VGS = 10 V; ID = 25 A; Tj = 25 °C; Fig. 12 VGS = 10 V; ID = 25 A; Tj = 100 °C; Fig. 12; Fig. 13 Dynamic characteristics QGD QG(tot) gate-drain charge total gate charge VGS = 10 V; ID = 75 A; VDS = 30 V; Fig. 14; Fig. 15 32 137 45 192 nC nC 3 3.5 mΩ [2] - 1.8 2.2 mΩ Scan or click this QR code to view the latest information for this product NXP Semiconductors PSMN2R0-60PS N-channel 60 V 2.2 mΩ standard level MOSFET in TO-220 Symbol EDS(AL)S Parameter non-repetitive drainsource avalanche energy [1] [2] Conditions VGS = 10 V; Tj(init) = 25 °C; ID...