PSMN2R5-60PL

PSMN2R5-60PL 27 February 2013 TO -2 20A B N-channel 60 V, 2.6 mΩ logic level MOSFET in SOT78 Product data sheet 1. General description Logic level N-channel MOSFET in SOT78 using TrenchMOS technology. Product design and manufacture has been optimized for use in battery operated power tools. 2. Features and benefits High efficiency due to low switching & conduction losses Robust construction for demanding applications Logic level gate 3. Applications Battery-powered tools Load switching Motor control Uninterruptible power supplies 4. Quick reference data Table 1. Symbol VDS ID Ptot RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 10 V; Tmb = 25 °C; Fig. 1 Tmb = 25 °C; Fig. 2 VGS = 10 V; ID = 25 A; Tj = 25 °C; Fig. 11 VGS = 10 V; ID = 25 A; VDS = 48 V; Fig. 13; Fig. 14 223 41.2 nC nC [1] Min - Typ - Max 60 150 349 Unit V A W Static characteristics drain-source on-state resistance 2 2.6 mΩ Dynamic characteristics QG(tot) QGD EDS(AL)S total gate charge gate-drain charge Avalanche ruggedness non-repetitive drainsource avalanche energy [1] ID = 150 A; Vsup ≤ 60 V; RGS = 50 Ω; VGS = 10 V; Tj(init) = 25 °C; unclamped; Fig. 3 - - 521.7 mJ Continuous current is limited by package. Scan or click this QR code to view the latest information for this product NXP Semiconductors PSMN2R5-60PL N-channel 60 V, 2.6 mΩ logic level MOSFET in SOT78 5. Pinning information T...