www.DataSheet.co.kr
LF PA K
PSMN2R6-30YLC
N-channel 30 V 2.8mΩ logic level MOSFET in LFPAK using NextPower technology
...
www.DataSheet.co.kr
LF PA K
PSMN2R6-30YLC
N-channel 30 V 2.8mΩ logic level
MOSFET in LFPAK using NextPower technology
Rev. 01 — 2 May 2011 Product data sheet
1. Product profile
1.1 General description
Logic level enhancement mode N-channel
MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.
1.2 Features and benefits
High reliability Power SO8 package, qualified to 175°C Low parasitic inductance and resistance Optimised for 4.5V Gate drive utilising NextPower Superjunction technology Ultra low QG, QGD, and QOSS for high system efficiencies at low and high loads
1.3 Applications
DC-to-DC converters Lithium-ion battery protection Load switching Power OR-ing Server power supplies Sync rectifier
1.4 Quick reference data
Table 1. Symbol VDS ID Ptot Tj RDSon Quick reference data Parameter drain current total power dissipation junction temperature drain-source on-state resistance VGS = 4.5 V; ID = 25 A; Tj = 25 °C; see Figure 12 VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 12 Conditions Tmb = 25 °C; VGS = 10 V; see Figure 1 Tmb = 25 °C; see Figure 2
[1]
Min -55 -
Typ 3.1
Max Unit 30 100 106 175 V A W °C
drain-source
voltage 25 °C ≤ Tj ≤ 175 °C
Static characteristics 3.65 mΩ mΩ
2.35 2.8
Datasheet pdf - http://www.DataSheet4U.net/
www.DataSheet.co.kr
NXP Semiconductors
PSMN2R6-30YLC
N-channel 30 V 2.8mΩ logic level
MOSFET in LFPAK using NextPower
Quick referenc...