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LF PA K
PSMN3R2-25YLC
N-channel 25 V 3.4 mΩ logic level MOSFET in LFPAK using NextPower technology
Rev. 01 — 2 May 2011 Product data sheet
1. Product profile
1.1 General description
Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.
1.2 Features and benefits
High reliability Power SO8 package, qualified to 175°C Low parasitic inductance and.
N-channel MOSFET
www.DataSheet.co.kr
LF PA K
PSMN3R2-25YLC
N-channel 25 V 3.4 mΩ logic level MOSFET in LFPAK using NextPower technology
Rev. 01 — 2 May 2011 Product data sheet
1. Product profile
1.1 General description
Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.
1.2 Features and benefits
High reliability Power SO8 package, qualified to 175°C Low parasitic inductance and resistance Optimised for 4.5V Gate drive utilising NextPower Superjunction technology Ultra low QG, QGD and QOSS for high system efficiencies at low and high loads
1.3 Applications
DC-to-DC converters Load switching Power OR-ing Server power supplies Sync rectifier
1.4 Quick reference data
Table 1. Symbol VDS ID Ptot Tj RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation junction temperature drain-source on-state resistance VGS = 4.5 V; ID = 25 A; Tj = 25 °C; see Figure 12 VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 12 Dynamic characteristics QGD QG(tot) gate-drain charge total gate charge VGS = 4.5 V; ID = 25 A; VDS = 12 V; see Figure 14; see Figure 15 4 14 nC nC Conditions 25 °C ≤ Tj ≤ 175 °C Tmb = 25 °C; VGS = 10 V; see Figure 1 Tmb = 25 °C; see Figure 2
[1]
Min -55 -
Typ 3.7 2.85
Max 25 100 79 175 4.45 3.4
Unit V A W °C mΩ mΩ
Static characteristics
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