PSMN3R9-100YSF

PSMN3R9-100YSF NextPower 100 V, 4.3 mΩ N-channel MOSFET in LFPAK56 package 17 February 2020 Preliminary data sheet 1. General description NextPower 100 V, standard level gate drive MOSFET. Qualified to 150 °C and recommended for industrial and consumer applications. 2. Features and benefits Low Qrr for higher efficiency and lower spiking 120 A ID (max) – demonstrated continuous current rating Low QG × RDSon FOM for high efficiency switching applications Strong avalanche energy rating (Eas) Avalanche rated and 100% tested Ha-free and RoHS compliant LFPAK56 package Wave-solderable LFPAK56 package 3. Applications Synchronous rectifier in AC-DC and DC-DC Primary side switch – 48 V DC-DC BLDC motor control USB-PD adapters Full-bridge and half-bridge applications Flyback and resonant topologies 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage ID drain current Ptot total power dissipation Tj junction temperature Static characteristics RDSon drain-source on-state resistance Dynamic characteristics QGD gate-drain charge QG(tot) total gate charge Conditions 25 °C ≤ Tj ≤ 150 °C VGS = 10 V; Tmb = 25 °C; Fig. 2 Tmb = 25 °C; Fig. 1 VGS = 10 V; ID = 25 A; Tj = 25 °C; Fig. 10 VGS = 10 V; ID = 25 A; Tj = 100 °C; Fig. 11 ID = 25 A; VDS = 50 V; VGS = 10 V; Fig. 12; Fig. 13 Min Typ Max Unit - - 100 V - - 120 A - - 245 W -55 - 150 °C - 3.3 4.3 mΩ - 5.1 6.9 mΩ - 15.8 35.6 nC - 79 111 nC Nexper...