PSMN4R0-40YS

PSMN4R0-40YS N-channel LFPAK 40 V 4.2 mΩ standard level MOSFET Rev. 02 — 12 July 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits  Advanced TrenchMOS provides low RDSon and low gate charge  High efficiency gains in switching power converters  Improved mechanical and thermal characteristics  LFPAK provides maximum power density in a Power SO8 package 1.3 Applications  DC-to-DC convertors  Lithium-ion battery protection  Load switching  Motor control  Server power supplies 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VDS drain-source Tj ≥ 25 °C; Tj ≤ 175 °C voltage ID drain current Tmb = 25 °C; VGS = 10 V; see Figure 1 Ptot total power Tmb = 25 °C; see Figure 2 dissipation Tj junction temperature Static characteristics RDSon drain-source on-state resistance VGS = 10 V; ID = 15 A; Tj = 100 °C; see Figure 12 VGS = 10 V; ID = 15 A; Tj = 25 °C; see Figure 12; see Figure 13 Min Typ Max Unit - - 40 V - - 100 A - - 106 W -55 - 175 °C - - 5.6 mΩ - 3.2 4.2 mΩ Nexperia PSMN4R0-40YS N-channel LFPAK 40 V 4.2 mΩ standard level MOSFET Table 1. Quick reference data …continued Symbol Parameter Conditions Dynamic characteristics QGD QG(tot) gate-drain charge VGS = 10 V; ID = 25 ...