D2
PA K
PSMN4R3-30BL
N-channel 30 V 4.1 mΩ logic level MOSFET in D2PAK
Rev. 1 — 22 March 2012 Product data sheet
1. P...
D2
PA K
PSMN4R3-30BL
N-channel 30 V 4.1 mΩ logic level
MOSFET in D2PAK
Rev. 1 — 22 March 2012 Product data sheet
1. Product profile
1.1 General description
Logic level N-channel
MOSFET in D2PAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.
1.2 Features and benefits
High efficiency due to low switching and conduction losses Suitable for logic level gate drive sources
1.3 Applications
DC-to-DC converters Load switching Motor control Server power supplies
1.4 Quick reference data
Table 1. Symbol VDS ID Ptot Tj RDSon Quick reference data Parameter drain-source
voltage drain current total power dissipation junction temperature drain-source on-state resistance VGS = 10 V; ID = 15 A; Tj = 100 °C; see Figure 12; see Figure 13 VGS = 10 V; ID = 15 A; Tj = 25 °C; see Figure 13 Dynamic characteristics QGD QG(tot) EDS(AL)S gate-drain charge total gate charge non-repetitive drain-source avalanche energy VGS = 4.5 V; ID = 15 A; VDS = 15 V; see Figure 14; see Figure 15 5 19 74 nC nC mJ Conditions Tj ≥ 25 °C; Tj ≤ 175 °C Tmb = 25 °C; VGS = 10 V; see Figure 1 Tmb = 25 °C; see Figure 2
[1]
Min -55 -
Typ 4.9 3.5
Max 30 100 103 175 5.8 4.1
Unit V A W °C mΩ mΩ
Static characteristics
Avalanche ruggedness VGS = 10 V; Tj(init) = 25 °C; ID = 100 A; Vsup ≤ 30 V; RGS = 50 Ω; unclamped
[1]
Continuous current is limited by package.
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