PSMN4R8-100BSE

PSMN4R8-100BSE N-channel 100 V 4.8 mΩ standard level MOSFET in D2PAK 12 April 2013 Product data sheet 1. General description Standard level N-channel MOSFET in a D2PAK package qualified to 175 °C. Part of Nexperia's "NextPower Live" portfolio, the PSMN4R8-100BSE complements the latest "hot-swap" controllers - robust enough to withstand substantial inrush currents during turn on, whilst offering a low RDS(on) characteristic to keep temperatures down and efficiency up in continued use. Ideal for telecommunication systems based on a 48 V backplane / supply rail. 2. Features and benefits Enhanced forward biased safe operating area for superior linear mode operation Very low RDS(on) for low conduction losses 3. Applications Electronic fuse Hot swap Load switch Soft start 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C IDM peak drain current pulsed; Tmb = 25 °C; tp ≤ 10 µs; Fig. 4 Ptot total power dissipation Tmb = 25 °C; Fig. 2 Static characteristics RDSon drain-source on-state VGS = 10 V; ID = 25 A; Tj = 25 °C; resistance Fig. 12 Dynamic characteristics QGD QG(tot) gate-drain charge total gate charge VGS = 10 V; ID = 25 A; VDS = 50 V; Fig. 14; Fig. 15 Min Typ Max Unit - - 100 V - - 707 A - - 405 W - 4.1 4.8 mΩ - 59 83 nC - 196 278 nC Nexperia PSMN4R8-100BSE N-channel 100 V 4.8 mΩ standard level MOSFET in D2PAK Symbol Parameter Avalanche Ruggedness EDS(AL)...