PSMN6R3-120PS

PSMN6R3-120PS 7 June 2013 TO -2 20A B N-channel 120 V 6.7 mΩ standard level MOSFET in TO-220 Product data sheet 1. General description Standard level N-channel MOSFET in TO-220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic power supply equipment. 2. Features and benefits High efficiency due to low switching and conduction losses Improved dynamic avalanche performance Suitable for standard level gate drive TO-220 package can be mounted to heatsink 3. Applications AC-to-DC power supply Synchronous rectification Motor control 4. Quick reference data Table 1. Symbol VDS ID Ptot RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation Conditions Tj ≥ 25 °C; Tj ≤ 175 °C Tmb = 25 °C; VGS = 10 V; Fig. 1 Tmb = 25 °C; Fig. 2 VGS = 10 V; ID = 25 A; Tj = 25 °C; Fig. 12 VGS = 10 V; ID = 25 A; VDS = 60 V; Fig. 14; Fig. 15 61.9 207.1 nC nC Min Typ Max 120 70 405 Unit V A W Static characteristics drain-source on-state resistance 4 5.7 6.7 mΩ Dynamic characteristics QGD QG(tot) EDS(AL)S gate-drain charge total gate charge Avalanche ruggedness non-repetitive drainsource avalanche energy VGS = 10 V; Tj(init) = 25 °C; ID = 70 A; Vsup ≤ 120 V; unclamped; RGS = 50 Ω; Fig. 3 532 mJ Scan or click this QR code to view the latest information for this product NXP Semiconductors PSMN6R3-120PS N-channel 120 V 6.7 mΩ standard level MOSFET in TO-220 5...