PSMN6R4-30MLD
N-channel 30 V, 6.4 mΩ logic level MOSFET in LFPAK33 using
NextPowerS3 Technology
21 January 2019
Prod...
PSMN6R4-30MLD
N-channel 30 V, 6.4 mΩ logic level
MOSFET in LFPAK33 using
NextPowerS3 Technology
21 January 2019
Product data sheet
1. General description
Logic level gate drive N-channel enhancement mode
MOSFET in an LFPAK33 package. The NextPowerS3 portfolio, utilising Nexperia’s unique “SchottkyPlus” technology, delivers high efficiency and the low spiking performance usually associated with
MOSFETs with an integrated Schottky or Schottky-like body diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies.
2. Features and benefits
Ultra low QG, QGD and QOSS for high system efficiency, especially at higher switching frequencies
Superfast switching with soft-recovery; s-factor > 1 Low spiking and ringing for low EMI designs Unique “SchottkyPlus” technology; Schottky-like performance with < 1 µA leakage at 25 °C Optimised for 4.5 V gate drive Low parasitic inductance and resistance High reliability clip bonded and solder die attach Mini Power SO8 package; no glue, no wire
bonds, qualified to 175 °C Exposed leads for optimal visual solder inspection
3. Applications
On-board DC-to-DC solutions for server and telecommunications Secondary-side synchronous rectification in telecommunication applications
Voltage regulator modules (VRM) Point-of-Load (POL) modules Power delivery for V-core, ASIC, DDR, GPU, VGA and system components Brushed and brushless motor ...