PSMN6R9-100YSF

PSMN6R9-100YSF NextPower 100 V, 7 mΩ N-channel MOSFET in LFPAK56 package 8 December 2017 Product data sheet 1. General description NextPower 100 V standard level gate drive MOSFET. Qualified to 175 °C and recommended for industrial & consumer applications. 2. Features and benefits Low Qrr for higher efficiency and lower spiking Qualified to 175 °C Low QG x RDSon FOM for high efficiency switching applications Strong avalanche energy rating (Eas) Avalanche rated and 100% tested Ha-free and RoHS compliant LFPAK56 package Wave-solderable LFPAK56 package 3. Applications Synchronous rectifier in AC-DC and DC-DC BLDC motor control USB-PD and mobile fast-charge adapters LED lighting Full-bridge and half-bridge applications Flyback and resonant topologies 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VDS drain-source voltage ID drain current Ptot total power dissipation Static characteristics 25 °C ≤ Tj ≤ 175 °C VGS = 10 V; Tmb = 25 °C; Fig. 2 Tmb = 25 °C; Fig. 1 RDSon drain-source on-state VGS = 10 V; ID = 25 A; Tj = 25 °C; resistance Fig. 10 Dynamic characteristics QGD gate-drain charge ID = 25 A; VDS = 50 V; VGS = 10 V; Fig. 12; Fig. 13 Source-drain diode Qr recovered charge IS = 25 A; dIS/dt = -100 A/µs; VGS = 0 V; VDS = 50 V; Fig. 16 Min Typ Max Unit - - 100 V - - 90 A - - 238 W - 5.6 7 mΩ - 10.3 - nC - 52.4 - nC Nexperia PSMN6R9-100YSF NextPower 100 V, 7 mΩ N-channel MOSFET in LFPAK...