DatasheetsPDF.com

PSMN7R5-30YLD Datasheet

Part Number PSMN7R5-30YLD
Manufacturers NXP
Logo NXP
Description N-channel MOSFET
Datasheet PSMN7R5-30YLD DatasheetPSMN7R5-30YLD Datasheet (PDF)

LFPAK56 PSMN7R5-30YLD N-channel 30 V, 7.5 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology 7 February 2014 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising NXP’s unique “SchottkyPlus” technology delivers high efficiency, low spiking performance usually associated with MOSFETs with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextP.

  PSMN7R5-30YLD   PSMN7R5-30YLD






Part Number PSMN7R5-30YLD
Manufacturers nexperia
Logo nexperia
Description N-channel MOSFET
Datasheet PSMN7R5-30YLD DatasheetPSMN7R5-30YLD Datasheet (PDF)

PSMN7R5-30YLD N-channel 30 V, 7.5 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology 7 February 2014 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising Nexperia’s unique “SchottkyPlus” technology delivers high efficiency, low spiking performance usually associated with MOSFETs with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPower.

  PSMN7R5-30YLD   PSMN7R5-30YLD







N-channel MOSFET

LFPAK56 PSMN7R5-30YLD N-channel 30 V, 7.5 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology 7 February 2014 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising NXP’s unique “SchottkyPlus” technology delivers high efficiency, low spiking performance usually associated with MOSFETs with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies. 2. Features and benefits • Ultra low QG, QGD and QOSS for high system efficiency, especially at higher switching frequencies • Superfast switching with soft-recovery; s-factor > 1 • Low spiking and ringing for low EMI designs • Unique “SchottkyPlus” technology; Schottky-like performance with < 1 µA leakage at 25 °C • Optimised for 4.5 V gate drive • Low parasitic inductance and resistance • High reliability clip bonded and solder die attach Power SO8 package; no glue, no wire bonds, qualified to 175 °C • Wave solderable; exposed leads for optimal visual solder inspection 3. Applications • On-board DC-to-DC solutions for server and telecommunications • Secondary-side synchronous rectification in telecommunication applications • Voltage regulator modules (VRM) • Point-of-Load (POL) modules • Power delivery for V-core, ASIC, DDR, GPU, VGA and system components • Brushed and brushless motor contr.


2016-01-28 : RX111    R5F51118AGFM    HSCF4242    MMFT2N02EL    VN2222LLG    MTP2P50EG    MTW32N20E    VN0300L    MTB50P03HDL    MVB50P03HDLT4G   


@ 2014 :: Datasheetspdf.com ::
Semiconductors datasheet search & download site (Privacy Policy & Contact)