PSMN8R2-80YS

PSMN8R2-80YS www.DataSheet4U.com N-channel LFPAK 80 V 8.5 mΩ standard level MOSFET Rev. 01 — 25 June 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits „ Advanced TrenchMOS provides low RDSon and low gate charge „ High efficiency gains in switching power converters „ Improved mechanical and thermal characteristics „ LFPAK provides maximum power density in a Power SO8 package 1.3 Applications „ DC-to-DC converters „ Lithium-ion battery protection „ Load switching „ Motor control „ Server power supplies 1.4 Quick reference data Table 1. VDS ID Ptot Tj Quick reference Conditions Tmb = 25 °C; VGS = 10 V; see Figure 1 Tmb = 25 °C; see Figure 2 Min -55 VGS = 10 V; Tj(init) = 25 °C; ID = 75 A; Vsup ≤ 80 V; RGS = 50 Ω; unclamped VGS = 10 V; ID = 25 A; VDS = 40 V; see Figure 14; see Figure 15 Typ Max 80 82 130 175 120 Unit V A W °C mJ drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C drain current total power dissipation junction temperature Symbol Parameter Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy Dynamic characteristics QGD QG(tot) gate-drain charge total gate charge 12 55 nC nC NXP Semiconductors www.DataSheet4U.com PSMN8R2-80YS N-channel LFPAK 80 V 8.5 mΩ standard level MOSFET Quick reference …continued Conditions VGS =...