PSMN8R5-100ES

PSMN8R5-100ES 11 October 2012 N-channel 100 V 8.5 mΩ standard level MOSFET in I2PAK Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a I2PAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to low switching and conduction losses Suitable for standard level gate drive sources 1.3 Applications AC-to-DC power supply equipment Motor control Server power supplies Synchronous rectification 1.4 Quick reference data Table 1. Symbol VDS ID Ptot RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation Conditions Tj ≥ 25 °C; Tj ≤ 175 °C Tj = 25 °C; VGS = 10 V; Fig. 1 Tmb = 25 °C; Fig. 2 VGS = 10 V; ID = 25 A; Tj = 25 °C; Fig. 13; Fig. 12 VGS = 10 V; ID = 25 A; VDS = 50 V; Fig. 14; Fig. 15 33 111 nC nC [1] Min - Typ - Max 100 100 263 Unit V A W Static characteristics drain-source on-state resistance 6.4 8.5 mΩ Dynamic characteristics QGD QG(tot) EDS(AL)S gate-drain charge total gate charge Avalanche Ruggedness non-repetitive drainsource avalanche energy [1] VGS = 10 V; Tj(init) = 25 °C; ID = 100 A; Vsup ≤ 100 V; RGS = 50 Ω; unclamped; Fig. 3 - - 219 mJ Continious current limited by package. Scan or click this QR code to view the latest information for this product NXP Semiconductors PSMN8R5-100ES N-channel 100 V 8.5 mΩ standard le...