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PSMN8R5-60YS
N-channel LFPAK 60 V, 8 mΩ standard level MOSFET
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PSMN8R5-60YS
N-channel LFPAK 60 V, 8 mΩ standard level
MOSFET
Rev. 01 — 22 December 2009 Product data sheet
1. Product profile
1.1 General description
Standard level N-channel
MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.
1.2 Features and benefits
Advanced TrenchMOS provides low RDSon and low gate charge High efficiency gains in switching power converters Improved mechanical and thermal characteristics LFPAK provides maximum power density in a Power SO8 package
1.3 Applications
DC-to-DC converters Lithium-ion battery protection Load switching Motor control Server power supplies
1.4 Quick reference data
Table 1. VDS ID Ptot Tj Quick reference Conditions Tmb = 25 °C; VGS = 10 V; see Figure 1 Tmb = 25 °C; see Figure 3 Min -55 VGS = 10 V; Tj(init) = 25 °C; ID = 76 A; Vsup ≤ 60 V; RGS = 50 Ω; unclamped VGS = 10 V; ID = 60 A; VDS = 30 V; see Figure 15 and 14 VGS = 10 V; ID = 60 A; VDS = 30 V; see Figure 14 and 15 Typ Max 60 76 106 175 97 Unit V A W °C mJ drain-source
voltage Tj ≥ 25 °C; Tj ≤ 175 °C drain current total power dissipation junction temperature Symbol Parameter
Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy Dynamic characteristics QGD QG(tot) gate-drain charge total gate charge 7.7 39 nC nC
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