PSMN8R7-100YSF
NextPower 100 V, 9 mΩ N-channel MOSFET in LFPAK56
package
1 November 2017
Product data sheet
1. General description
NextPower 100 V standard level gate drive MOSFET. Qualified to 175 °C and recommended for industrial & consumer applications.
2. Features and benefits
• Low Qrr for higher efficiency and lower spiking • Qualified to 175 °C • Low QG x RDSon FOM for high efficiency switching applications • Strong avalanche energy rating (Eas) • Avalanche rated and 100% tested • H.
N-channel MOSFET
PSMN8R7-100YSF
NextPower 100 V, 9 mΩ N-channel MOSFET in LFPAK56
package
1 November 2017
Product data sheet
1. General description
NextPower 100 V standard level gate drive MOSFET. Qualified to 175 °C and recommended for industrial & consumer applications.
2. Features and benefits
• Low Qrr for higher efficiency and lower spiking • Qualified to 175 °C • Low QG x RDSon FOM for high efficiency switching applications • Strong avalanche energy rating (Eas) • Avalanche rated and 100% tested • Ha-free and RoHS compliant LFPAK56 package • Wave-solderable LFPAK56 package
3. Applications
• Synchronous rectifier in AC-DC and DC-DC • BLDC motor control • USB-PD and mobile fast-charge adapters • LED lighting • Full-bridge and half-bridge applications • Flyback and resonant topologies
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDS drain-source voltage ID drain current Ptot total power dissipation Tj junction temperature Static characteristics
25 °C ≤ Tj ≤ 175 °C VGS = 10 V; Tmb = 25 °C; Fig. 2 Tmb = 25 °C; Fig. 1
RDSon
drain-source on-state VGS = 10 V; ID = 25 A; Tj = 25 °C;
resistance
Fig. 10
VGS = 10 V; ID = 25 A; Tj = 100 °C; Fig. 11
Dynamic characteristics
QGD QG(tot)
gate-drain charge total gate charge
ID = 25 A; VDS = 50 V; VGS = 10 V; Fig. 12; Fig. 13
Min Typ Max Unit
- - 100 V
- - 90 A
- - 198 W
-55 -
175 °C
-
7.2 9
mΩ
-
10.7 14
mΩ
- 7.5 - nC - 38.5 - nC
Nexperia
PSMN8R7-100YSF
NextPower 100 V, 9 mΩ N-cha.