PSMN8R7-80PS

PSMN8R7-80PS N-channel 80 V 8.7 mΩ standard level MOSFET in TO-220 Rev. 02 — 1 November 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO-220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits „ High efficiency due to low switching and conduction losses „ Suitable for standard level gate drive 1.3 Applications „ DC-to-DC converters „ Load switching „ Motor control „ Server power supplies 1.4 Quick reference data Table 1. Quick reference data Symbol VDS ID Parameter drain-source voltage drain current Conditions Tj ≥ 25 °C; Tj ≤ 175 °C Tmb = 25 °C; VGS = 10 V; see Figure 1 Ptot total power dissipation Tj junction temperature Static characteristics Tmb = 25 °C; see Figure 2 RDSon drain-source on-state resistance Dynamic characteristics VGS = 10 V; ID = 10 A; Tj = 100 °C; see Figure 12 VGS = 10 V; ID = 10 A; Tj = 25 °C; see Figure 13 QGD QG(tot) gate-drain charge total gate charge VGS = 10 V; ID = 25 A; VDS = 40 V; see Figure 14; see Figure 15 Avalanche ruggedness EDS(AL)S non-repetitive VGS = 10 V; Tj(init) = 25 °C; drain-source avalanche ID = 90 A; Vsup ≤ 80 V; energy RGS = 50 Ω; unclamped [1] Measured 3 mm from package. Min Typ Max Unit - - 80 V - - 90 A --55 - 170 W 175 °C [1] - - 14 mΩ 7.5 8.7 mΩ - 11 - nC - 52 - nC - - 120 mJ Nexperia PSMN8R7-80PS N-channel 80 V ...