PSMN9R5-100PS
N-channel 100 V 9.6 mΩ standard level MOSFET in T0220
Rev. 01 — 22 January 2010 Objective data sheet
1. P...
PSMN9R5-100PS
N-channel 100 V 9.6 mΩ standard level
MOSFET in T0220
Rev. 01 — 22 January 2010 Objective data sheet
1. Product profile
1.1 General description
Standard level N-channel
MOSFET in a TO220 packages qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.
1.2 Features and benefits
High efficiency due to low switching and conduction losses Suitable for standard level gate drive
1.3 Applications
DC-to-DC converters Load switching Motor control Server power supplies
1.4 Quick reference data
Table 1. VDS ID Ptot
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Quick reference Conditions Tmb = 25 °C; VGS = 10 V; see Figure 1 Tmb = 25 °C; see Figure 2 Min Typ Max 100 89 211 Unit V A W drain-source
voltage Tj ≥ 25 °C; Tj ≤ 175 °C drain current total power dissipation gate-drain charge total gate charge
Symbol Parameter
Dynamic characteristics QGD QG(tot) VGS = 10 V; ID = 60 A; VDS = 50 V; see Figure 14 and 15 VGS = 10 V; ID = 15 A; Tj = 25 °C; see Figure 13 23 82 nC nC
Static characteristics RDSon drain-source on-state resistance 8.16 9.6 mΩ
NXP Semiconductors
PSMN9R5-100PS
N-channel 100 V 9.6 mΩ standard level
MOSFET in T0220
2. Pinning information
Table 2. Pin 1 2 3 mb Pinning information Symbol G D S D Description gate drain source mounting base; connected to drain
mb
D
Simplified outline
Graphic symbol
G
mbb076
S
1 2 3
SOT78 (TO-220AB)
3. Ordering information
Table 3. Ordering information ...