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PSMNR51-25YLH Datasheet

Part Number PSMNR51-25YLH
Manufacturers nexperia
Logo nexperia
Description N-channel MOSFET
Datasheet PSMNR51-25YLH DatasheetPSMNR51-25YLH Datasheet (PDF)

PSMNR51-25YLH N-channel 25 V, 0.57 mΩ, 380 A logic level MOSFET in LFPAK56E using NextPowerS3 technology 30 September 2019 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56E package optimized for low RDSon, low IDSS leakage even when hot, high efficiency and high current. Rated to 380 A, optimized for DC load switch and hot-swap applications. 2. Features and benefits • 100% avalanche tested at I(AS) = 190 A • Optimized for low RDS.

  PSMNR51-25YLH   PSMNR51-25YLH






N-channel MOSFET

PSMNR51-25YLH N-channel 25 V, 0.57 mΩ, 380 A logic level MOSFET in LFPAK56E using NextPowerS3 technology 30 September 2019 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56E package optimized for low RDSon, low IDSS leakage even when hot, high efficiency and high current. Rated to 380 A, optimized for DC load switch and hot-swap applications. 2. Features and benefits • 100% avalanche tested at I(AS) = 190 A • Optimized for low RDSon • Low leakage < 1 μA at 25 °C • Low spiking and ringing for low EMI designs • Optimized for 4.5 V gate drive • Copper-clip for low parasitic inductance and resistance • High reliability LFPAK package, qualified to 175 °C • Wave solderable; exposed leads for optimal solder coverage and visual solder inspection 3. Applications • Hot swap • e-Fuse • Power OR-ing • DC switch / Load switch • Battery protection • Brushed and BLDC (brushless) motor control • Synchronous rectification in AC-DC and DC-DC applications 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage ID drain current Ptot total power dissipation Tj junction temperature Static characteristics RDSon drain-source on-state resistance Dynamic characteristics QGD gate-drain charge QG(tot) total gate charge Conditions 25 °C ≤ Tj ≤ 175 °C VGS = 10 V; Tmb = 25 °C; Fig. 2 Tmb = 25 °C; Fig. 1 VGS = 10 V; ID = 25 A; Tj = 25 °C; Fig. 10 VGS = 4.5 V; ID = 25 A; Tj = 25 °C; Fig.


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