PSMNR70-30YLH

PSMNR70-30YLH N-channel 30 V, 0.82 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 technology 11 January 2019 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package optimized for low RDSon. Low IDSS leakage even when hot, high efficiency and high current rated to 300 A, optimized for DC load switch and hot-swap applications. 2. Features and benefits 100% avalanche tested at I(AS) = 190 A Optimized for low RDSon Low leakage < 1 µA at 25 °C Low spiking and ringing for low EMI designs Optimized for 4.5 V gate drive Copper-clip for low parasitic inductance and resistance High reliability LFPAK package, qualified to 175 °C Wave solderable; exposed leads for optimal solder coverage and visual solder inspection 3. Applications Hot swap e-fuse Power OR-ing DC switch / Load switch Battery protection Brushed and BLDC (brushless) motor control Synchronous rectification in AC-DC and DC-DC applications 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage ID drain current Ptot total power dissipation Tj junction temperature Static characteristics RDSon drain-source on-state resistance Dynamic characteristics QGD gate-drain charge QG(tot) total gate charge Conditions 25 °C ≤ Tj ≤ 175 °C VGS = 10 V; Tmb = 25 °C; Fig. 2 Tmb = 25 °C; Fig. 1 VGS = 10 V; ID = 25 A; Tj = 25 °C; Fig. 10 VGS = 4.5 V; ID = 25 A; Tj = 25 °C; Fig. 10 ...