PSMNR90-40YLH
N-channel 40 V, 0.94 mΩ, 300 A logic level MOSFET in
LFPAK56E using NextPower-S3 Schottky-Plus technology
26 April 2019
Product data sheet
1. General description
300 Amp, logic level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56E package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance power switching applications.
2. Features and benefits
• 300 A continuous ID(max) • Avalanche rated, 100% te.
N-channel MOSFET
PSMNR90-40YLH
N-channel 40 V, 0.94 mΩ, 300 A logic level MOSFET in
LFPAK56E using NextPower-S3 Schottky-Plus technology
26 April 2019
Product data sheet
1. General description
300 Amp, logic level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56E package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance power switching applications.
2. Features and benefits
• 300 A continuous ID(max) • Avalanche rated, 100% tested • NextPower-S3 technology delivers 'superfast switching with soft body-diode recovery' • Low QRR, QG and QGD for high system efficiency and low EMI designs • Schottky-Plus body-diode, gives soft switching without the associated high IDSS leakage • Strong linear-mode / SOA rating • Optimised for 4.5 V gate drive utilising NextPower-S3 Superjunction technology • High reliability LFPAK (Power SO8) package, with copper-clip and solder die attach, qualified to
175 °C • Exposed leads can be wave soldered, visual solder joint inspection and high quality solder
joints for ultimate reliability • Low parasitic inductance and resistance
3. Applications
• High-performance synchronous rectification • DC-to-DC converters • High performance and high efficiency server power supply • Brushless DC motor control • Battery protection • Load-switch and eFuse
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
ID drain current
Ptot total power dissipa.