PT8501BP

PT8501BP 5mm Lamp Type Photo Transistor Features  High photo sensitivity  High reliability  Spectral range of sensitivity: 760-1100nm  Fast Response time  RoHS compliance Applications  Infrared sensor  Optical switches Description The PT8501BP is silicon NPN Phototransistor. The device comes with a superior filtering for visible light by utilizing special black epoxy. Package Outline Schematic Emitter Collector CT Micro Proprietary & Confidential Page 1 Rev 1 Sep, 2013 PT8501BP 5mm Lamp Type Photo Transistor Absolute Maximum Rating at 250C Symbol Parameters IC Collector Current BVCEO Collector-Emitter Voltage BVECO Emitter-Collector Voltage Topr Operating Temperature Tstg Storage Temperature Tsol Soldering Temperature Pto Total Power Dissipation Ratings 20 35 5 -40 ~ +85 -40 ~ +100 260 150 Units mA V V 0C 0C 0C mW Notes 1 2 3 CT Micro Proprietary & Confidential Page 2 Rev 1 Sep, 2013 PT8501BP 5mm Lamp Type Photo Transistor Optical Characteristics Symbol Parameters  Spectral Bandwidth P Peak Sensitivity θ1/2 View Angle Electrical Characteristics Symbol Parameters ICEO Dark Current VCE(sat) Collector-Emitter Saturation Voltage IC Collector Light Current CT Total Capacitance Switching Characteristics Symbol Parameters tr Rise Time tf Fall Time Test Conditions - VCE=5V Min Typ Max Units Notes 760 - 1100 nm - 880 - nm - 12.5 - deg Test Conditions Ee=0mW /cm2 VCE=20V Ee=1mW /cm2 IC=1.25mA Ee=1mW /cm2 P=940nm, VCE=5V Ee=...