PTP81708T06

Features  Small double-end package  High photo sensitivity  High reliability  Spectral range of sensitivity: 400-1100nm  Fast Response time  RoHS compliance Applications  Infrared sensor  Infrared Touch Panel Solutions PTP81708T06 SMD Type Phototransistor Description The PTP81708T06 is silicon NPN Phototransistor The device has wide spectral sensitivity range from 400 to 1100nm. Package Outline Schematic Emitter Collector CT Micro Proprietary & Confidential Page 1 Rev 0(Preliminary) Sep, 2017 PTP81708T06 SMD Type Phototransistor Absolute Maximum Rating at 250C Symbol Parameters IC Collector Current BVCEO Collector-Emitter Voltage BVECO Emitter-Collector Voltage Topr Operating Temperature Tstg Storage Temperature Tsol Soldering Temperature Pto Total Power Dissipation Optical Characteristics Symbol Parameters  Spectral Bandwidth P Peak Sensitivity θ1/2 View Angle Test Conditions - VCE=5V Electrical Characteristics Symbol Parameters ICEO Dark Current VCE(sat) Collector-Emitter Saturation Voltage IC Collector Light Current CT Terminal Capacitance Test Conditions Ee=0mW /cm2 VCE=20V Ee=1mW /cm2 IC=0.3mA Ee=1mW /cm2 P=940nm, VCE=5V Ee=0mW /cm2 f=1MHz ,VCE=5V Ratings 20 35 5 -40 ~ +85 -40 ~ +100 260 150 Units mA V V 0C 0C 0C mW Notes 1 2 3 Min Typ Max Units Notes 400 - 1100 nm - 820 - nm - 65 - deg Min Typ Max Units Notes - - 100 nA - - 0.4 V 0.3 0.8 - mA - 2.45 - pF CT Micro Proprietary & Confidential Page 2 Rev 0(Preliminar...