PTP83016BT24

PTP83016BT24 SMD Type Phototransistor with Daylight Filter Features  Small double-end package  High photo sensitivity  High reliability  Spectral range of sensitivity: 760-1100nm  Fast Response time  RoHS compliance Applications  Infrared sensor  Infrared Touch Panel Solutions Description The PTP83016BT24 is silicon NPN Phototransistor housed in a miniature SMD package. The device comes with a superior filtering for visible light by utilizing special black molding compound. Package Outline Schematic Emitter CT Micro Proprietary & Confidential Collector Page 1 Rev 4 Jul, 2016 PTP83016BT24 SMD Type Phototransistor with Daylight Filter Absolute Maximum Rating at 250C Symbol Parameters IC Collector Current BVCEO Collector-Emitter Voltage BVECO Emitter-Collector Voltage Topr Operating Temperature Tstg Storage Temperature Tsol Soldering Temperature Pto Total Power Dissipation Optical Characteristics Symbol Parameters  Spectral Bandwidth P Peak Sensitivity θ1/2 View Angle Test Conditions - VCE=5V Electrical Characteristics Symbol Parameters ICEO Dark Current VCE(sat) Collector-Emitter Saturation Voltage IC Collector Light Current CT Terminal Capacitance Test Conditions Ee=0mW /cm2 VCE=20V Ee=1mW /cm2 IC=1.4mA Ee=1mW /cm2 P=940nm, VCE=5V Ee=0mW /cm2 f=1MHz ,VCE=5V Ratings 20 35 5 -40 ~ +85 -40 ~ +100 260 150 Units mA V V 0C 0C 0C mW Notes 1 2 3 Min Typ Max Units Notes 760 - 1100 nm - 880 - nm - 22.5 - deg Min Typ Max Units Notes ...