PTP83016BT24 SMD Type Phototransistor with Daylight Filter
Features
Small double-end package High photo sensitivity...
PTP83016BT24 SMD Type Phototransistor with Daylight Filter
Features
Small double-end package High photo sensitivity High reliability Spectral range of sensitivity: 760-1100nm Fast Response time RoHS compliance
Applications
Infrared sensor Infrared Touch Panel Solutions
Description
The PTP83016BT24 is silicon NPN Phototransistor housed in a miniature SMD package. The device comes with a superior filtering for visible light by utilizing special black molding compound.
Package Outline
Schematic
Emitter
CT Micro Proprietary & Confidential
Collector
Page 1
Rev 4 Jul, 2016
PTP83016BT24 SMD Type Phototransistor with Daylight Filter
Absolute Maximum Rating at 250C
Symbol
Parameters
IC Collector Current
BVCEO Collector-Emitter
Voltage
BVECO Emitter-Collector
Voltage
Topr Operating Temperature
Tstg Storage Temperature
Tsol Soldering Temperature
Pto Total Power Dissipation
Optical Characteristics
Symbol
Parameters
Spectral Bandwidth
P Peak Sensitivity θ1/2 View Angle
Test Conditions -
VCE=5V
Electrical Characteristics
Symbol
Parameters
ICEO Dark Current
VCE(sat)
Collector-Emitter Saturation
Voltage
IC Collector Light Current
CT Terminal Capacitance
Test Conditions Ee=0mW /cm2 VCE=20V Ee=1mW /cm2 IC=1.4mA Ee=1mW /cm2
P=940nm, VCE=5V Ee=0mW /cm2
f=1MHz ,VCE=5V
Ratings 20 35 5
-40 ~ +85 -40 ~ +100
260 150
Units mA V V 0C 0C 0C mW
Notes 1 2
3
Min Typ Max Units Notes
760 - 1100 nm
- 880 - nm
- 22.5 -
deg
Min Typ Max Units Notes ...