PV563BA
P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-40V
15mΩ @VGS = -10V
ID -9.5A
SOP- 08
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS -40
Gate-Source Voltage
VGS ±25
Continuous Drain Current Pulsed Drain Current1
TA = 25 °C TA = 70 °C
ID IDM
-9.5 -7.6 -40
Avalanche Current
IAS -32
Avalanche Energy
L=0.1mH
EAS
53
Power Dissipation3
TA = 25 °C TA = 70 °C
PD
3 2
J.
P-Channel MOSFET
PV563BA
P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-40V
15mΩ @VGS = -10V
ID -9.5A
SOP- 08
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS -40
Gate-Source Voltage
VGS ±25
Continuous Drain Current Pulsed Drain Current1
TA = 25 °C TA = 70 °C
ID IDM
-9.5 -7.6 -40
Avalanche Current
IAS -32
Avalanche Energy
L=0.1mH
EAS
53
Power Dissipation3
TA = 25 °C TA = 70 °C
PD
3 2
Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL MAXIMUM
Junction-to-Ambient2 Junction-to-Ambient2
t ≦10s Steady-State
RqJA RqJA
40 75
Junction-to-Case
Steady-State
RqJC
24
1Pulse width limited by maximum junction temperature.
2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz.Copper.in a still air
environment with TA=25°C.
3The Power dissipation is .